Want this question answered?
2-3v
It depends on: 1. technology, whether it's a JFET, enhancement-mode IGFET/MOSFET or depletion-mode IGFET/MOSFET, and 2. polarity, whether it's an N type or P type. More info needed for this one.
N - channel enhancement mode device. by Engr. YuvZ
If negative voltage is applied to the gate of a NMOS, it repels electrons from the channel region towards the bulk of the p-substrate and attaract holes from p-substrate towards the channel. The recombination between holes and electrons causes a deplation of majority carriers in the channel. Enough nagative gate voltage can cause the channel depleted of majority carriers and cuts off the current between the source and the drain. The least negative gate voltage causing this is called gate-source cut off voltage.
to made reverse bias junction between gate to source
2-3v
MOSFET is Metal Oxide Semiconductor Field Effect Transistor. IGFET Insulated Gate Field Effect Transistor. But these expressions are practically synonyms.
It depends on: 1. technology, whether it's a JFET, enhancement-mode IGFET/MOSFET or depletion-mode IGFET/MOSFET, and 2. polarity, whether it's an N type or P type. More info needed for this one.
N - channel enhancement mode device. by Engr. YuvZ
FET is a field effect transistor, abbreviated to FET. There are two basic types of FET: a junction FET abbreviated to JFET and an insulated gate FET , abbreviated to IGFET. The most common type of IGFET is a metal-oxide silicon FET, Known as a MOSFET. Modern microprocessors may contain tens of millions of MOSFETs.
Solo!
Transistor with 2 gate on top and bot of the channel
Both are the same!
To create the depletion layer required for JFET operation the gate-source junction must be reverse biased.for N channel, the channel must be positive relative to the gate meaning Vgs must be negativefor P channel, the channel must be negative relative to the gate meaning Vgs must be positive
To create the depletion layer required for JFET operation the gate-source junction must be reverse biased.for N channel, the channel must be positive relative to the gate meaning Vgs must be negativefor P channel, the channel must be negative relative to the gate meaning Vgs must be positive
If negative voltage is applied to the gate of a NMOS, it repels electrons from the channel region towards the bulk of the p-substrate and attaract holes from p-substrate towards the channel. The recombination between holes and electrons causes a deplation of majority carriers in the channel. Enough nagative gate voltage can cause the channel depleted of majority carriers and cuts off the current between the source and the drain. The least negative gate voltage causing this is called gate-source cut off voltage.
What about it? It's a discontinued 4 channel rack-mounted noise gate. The new version is XR4400