Where can you buy a germanium diode What store?
I suggest your local electronics parts jobber, or one of the mail order or internet electronics parts stores (e.g. Mouser, DigiKey, Jameco Electronics).
There is no exact substitute for a germanium diode, except another germanium diode. However if the only concern is to get a lower forward voltage drop than that of a silicon diode (0.7V), then a schottky barrier diode may be a suitable replacement as its forward voltage drop (<0.1V) is even lower than that of a germanium diode (0.2V).
silicon diode is preferred more when compared with germanium diode because in silicon diode the operating voltage is 0.7v where as in germanium diode the operating voltage is 0.3v , germanium is temperature sensitive so it can be easily destroyed by increasing temperature hence silicon diode is preferred more
In general O in diodes stands for germanium.since OA79 is a germanium diode O stands for germanium
The silicon diode (unless its a Schottky diode) conducts at approximately 0.6 volts. The germanium diode, however, conducts at a much lower voltage, typically 0.2 volts. This means that the germanium diode is better at small signal rectification applications, such as AM radio detectors, allowing a smaller tuner tank circuit.
In OA79, the letter A stands for rectifier diode and O stands for Germanium. It acts as a point contact germanium diode and also be replaced with 1N4148 depending on the circuit.
The entire 1N40xx series of power diodes are all silicon. The OA79 small signal diode is germanium.
A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.
A: a silicon diode has better temperature coefficient higher breakdown voltage higher current capability and low leakage. a germanium diode however does have a lower forward voltage drop.
You will have to look it up in a databook to be certain.
In silicon, about 0.7 volts. In germanium, about 1.5 volts. Let me fill some for this..... For the silicon diode, barrier potential voltage is about 0.65 V , For the germanium diode is about 0.25 V.
A Germanium diode has a much lower breakdown voltage than a silicone diode.
i think to make earth feel better visit my blog for more at http://www.jewelryinworld.blogspot.com OA79 represents Germanium diode. O = germanium, A= rectifier diode.
To forward bias a germanium diode you need to reach between 0.2 and 0.3 V between anode (+) and cathode (-). Once this voltage is reached, the diode will conduct. Make sure you have a resistor to limit the forward current to a safe (for the diode, that is) value.
No. An ordinary diode, be it silicon or germanium, conducts in one direction only, whereas a zener diode conducts in both directions, but at different voltages. An ordinary diode is used to rectify, using its forward bias characteristics, while a zener diode is used to regulate, using its reverse bias characteristics.
0a79 ( germanium diode )in glass construction form is used in AM detector circuits.
Silicon diode can bear more temperature than germenium Easily available
Germanium has the ability to operate as a diode, only allowing DC current to flow one way.
From any electronics parts jobber. If you can't find a local jobber, try mail order ones via the Internet.
germenium diode contains majority electron as a charge carriers while the silicon diode contains holes as a majority charge cariers,
Simple, Use the multi-meter , switch to the diode option then connect the positive wire to the positive of diode n negative to the negative ( +ve wire red, -ve wire black) if the there is a reading of =~0.7V then it is silicon. and if it is =~ 0.3V then it is germanium.
The 1N34 is a germanium signal diode, so it would be used as a detector/mixer in a.m. reception for example.
Yes, I am using one in my electronics class currently
the cut in vol for silicon diode is 0.7 where as germaium is around 0.3 because of their construction( the ratio of majority n minority carreirs)
0.3v as opposed to the silicon 0.6v
Silicon = 0.7v : Germanium = 0.3v
GE diode is made up of germanium and Si diode is made up of silicon and there is a difference in break down voltages also for Ge it is 0.7v and for Si it is 0.3
It is not "OA 79" it is "0A79", that is the digit zero not the letter "O". The designation of 0A79 is inherited from old designation system for Vacuum Tubes. 0 - 0V heater/filament or no heater/filament meaning a Cold Cathode device A - Low Current Diode 79 - an arbitrary unique number identifying the specific device type, in this case a solid state germanium diode not a vacuum diode or gas diode
Reverse saturation current of germanium diode The current that exists under reverse bias conditions is called the reverse saturation current. Reverse saturation current of the germanium diode is typically 1 micro ampere or 10-6 a. At a fixed temperature, the reverse saturation current of a diode increases with increase in applied reverse bias. In reverse bias region the reverse saturation current also varies with the temperature.
The forward biased voltage drop of a diode depends on the type of diode and the current through the diode. A typical silicon diode will exhibit a voltage drop between 0.6v and 1.4v depending on current. An LED might range from 2v to 3v. A germanium diode might go a low as 0.2v. Bottom line; it varies.
Diode is a device which allows the current through it, when we apply above the break down voltage on it. which means 0.7v for silicon diode. and 0.3 volt for germanium diode. here if we apply ac voltage on diode, it will pass only the +ve half cycle of ac. it will block only the negative half cycle of ac. I mean diode allows only the partial current of ac.
depends on the type of diode and other variables point contact diode, 0.1V to 1V depending on current drawn schottky barrier diode, ~0.1V germanium diode, 0.2V silicon diode, 0.7V light emitting diode, ~1V to ~5V depending on color of light vacuum tube diode, depends on tube construction and current drawn gas filled diodes, there are too many variables to cover here etc.
Germanium point contact diodes were first created and used during World War 2 as detectors in microwave RADAR systems, as the vacuum tubes available at that time did not operate at microwave frequencies. Shortly after World War 2 germanium junction diodes were created.
Silicon has energy level (orbit) of 3 (14 e) while Germanium has 4 (32 e). That is the 4 valence electrons of Si are found in the 3rd orbit from the nucleus while 4th for Ge. The closer the electrons to the nucleus the higher energy is needed to knock it down from its orbit.
The barrier voltage of a diode is 0.7v for silicon and 0.3 for germanium. after this voltage is reached the current starts increasing rapidly... till this voltage is reached the current increases in very small steps...
Negitive cathode, positive anode, voltage accross barrier = 0.3V
The OA79 is a germanium based diode. This conducts in the forward biased direction at ~0.3Volts. Silicon diodes Conduct in the forward biased direction at ~0.6 or 0.7 volts. If you are wanting to detect weaker signals a germanium diode is a good choice. Nowadays we have good quality low price transistors that can amplify weak signals and the difference between the diodes is not that important in many circuits. Silicon is a very common… Read More
The symbol 'A' indicates that this device is made from germanium . as you may know germanium has less cut in voltage so this device is used for low power signal or for signal processing. also the leakage current or reverse saturation current of germanium is greater than silicon.
A: They both have redeemable quality. Germanium has lower turn on voltage as compared to silicon however their current capability is not too great and also have a problem leaking with temperature. SO THE USE IS DEPENDENT ON APPLICATIONS
A germanium diode controls the movement of electricity; arrows on the circuit depict which way, the 555 timer IC a unified chip capable of alarm and multivibratior functions. A fire alarm can built using these two parts plus resistors, capacitors, transistor, speaker, printed circuit board and 9v battery.
The cut in voltage is that voltage where after the current increase rapidly and it's value is different-2 for different type of semiconductor. for silicon it is 0.7 and for germanium it is 0.3 volt. It means if you made a diode from silicon than applied voltage below 0.7 volt will not able to flow current (if flow than it is in term of few micro ampere) . it means diode will stay in off… Read More
silicon diodes Cut in voltage is 0.7 V.but the Germanium cut in voltage is 0.3 V that's why .............
There are two basic types of diodes; Silicon and Germanium. I would use germanium because it has a lower forward bias than silicon. I suspect that what you really want to know is how to hook up an isolation diode. This is a diode that is installed in series with the alternate power source to isolate one from the other. Whether you use germanium or silicon the way that you want to hook it up… Read More
Who invented the first semiconductor diode what it is called as and from which metal it is made up of?
The first modern semiconductor diode was made with germanium. These diodes were invented in ww2 for RADAR. But before that semiconductor diodes were made with galena (lead sulfide), copper oxide, and selenium. I have no idea which was "first".
Germanium has a much greater tendency than does silicon to produce minority carriers through thermal excitation of its valence band electrons (because the atom is larger these electrons are further from the nucleus and thus looser bound to it). It is the quantity of minority carriers that determines the amount of leakage when reverse biased and thus the reverse current of the junction. Thus germanium devices have more reverse current and silicon devices less reverse… Read More
By connecting collector to base, you get a *lower* forward voltage drop than with a simple diode. Example: germanium diode-connected transistor has a drop of about 0.13 volts, rectifier diode about 0.3 (over 2.5 times) It's just that rectifiers are optimised for rectification, are designed to work at (generally) higher currents, and are cheaper.
You can buy diode lasers at most electronics stores and online(ebay).
cut in voltage *** for silicon is 0.7volts and that for germanium is 0.3volts. According to Millman and Taub, "Pulse, Digital and Switching Waveforms", McGraw-Hill 1965, the cutin (or offset, break-point or threshold) voltage for a silicon diode is 0.6, and 0.2 for germanium. Breakdown voltage is another thing entirely. It is the reverse voltage at which the junction will break down.