the valence band energy is different in the two substances,so the cut in voltage is different.
Though germanium diodes were the first ones fabricated, several factors make silicon the choice vs. germanium diodes. Silicon diodes have a greater ease of processing, lower cost, greater power handling, less leakage and more stable temperature characteristics than germanium diodes. Germanium diodes' lower forward drop (.2V to .3V versus .7V to 1.0V) make them better at small signal detection and rectification.
germanium has great intrinsic concentration at room temperature,hence conduction is great in germanum compared to silicon, and resistance decreases in germanum and hence built in potentail also less in germanum compared to silicon.built in potential of silicon is 0.7v built in potential of germanum is 0.3v. 1)intrinsic concentration of germanium at room temperature is 2.5*10^13 atoms/cm^3. 2)intrinsic concentration of silicon at room temperature of 300k is 1.5*10^10 atoms/cm^3.
No, Germanium is not magnetic, as it is diamagnetic (Fancy word for repulsive) meaning that rather than attracting (Magnetic) It sends objects away.
Germanium is a semiconductor, it means that electrons are relatively strongly attached to nuclei. As result its thermal properties change. Generally semiconductors have worse thermoconductivity than metals but better than insulators.
Germanium is a semiconductor, it means that electrons are relatively strongly attached to nuclei. As result its thermal properties change. Generally semiconductors have worse thermoconductivity than metals but better than insulators.
products made by silicon are more stable than those made by germanium
Because the space charge region or depletion region is small in germanium compared to silicon hence leakage current is more in germanium than silicon
In semiconductor uses, such as diodes and transistors, the forward voltage drop for Silicon (Si) is a little less than 0.7 volts, while the FVD for Germanium (Ge) is about 0.3 volts.
Silicon is a good semi conductor than germanium because silicon is more readily available, cheaper and stable.
Silicon is more semiconductor than Germanium because the characteristics of silicon can be easily modified to obtain either a p-type or n-type material.
silicon has a wider bandgap than germenium .silicon jeakage current small, easily available then Ga and break down voltage is more. knee voltage of si is 0.7and Ga is having 0.3then Si is very useful.
Germanium has four number of shells while Silicon has three number of shell. therefore for germanium less energy is required to move the electron from valence band to conduction band if compared to silicon. So at room temperature for germanium their are more number of electrons present in conduction bond hence more number of holes present in the valence energy band. Due to movement of holes reverse saturation current is produced. Their is more number of hole movement in germanium comparatively therefore reverse saturation current is more than silicon for germanium. You may refer to Electronic Devices and Circuits by Allen Mottershead Regards, Zain Ijaz UCTI, Malaysia Mechatronic Engineer.
If it's a germanium transistor, 0.3 volts. If it's the more common silicon transistor, slightly more than 0.6 volts.
silicon diodes Cut in voltage is 0.7 V.but the Germanium cut in voltage is 0.3 V that's why .............
There is no exact substitute for a germanium diode, except another germanium diode. However if the only concern is to get a lower forward voltage drop than that of a silicon diode (0.7V), then a schottky barrier diode may be a suitable replacement as its forward voltage drop (<0.1V) is even lower than that of a germanium diode (0.2V).
Germanium diodes are more expensive than silicon ones, germanium is harder to process, germanium cannot be used to make integrated circuits (while early prototype integrated circuits were germanium the wiring between the integrated components cannot be integrated making it too expensive for production), germanium cannot operate with a junction temperature above 60C (silicon will operate up to 150C), and its reverse leakage current is greater. However! Germanium diodes have a lower forward voltage drop than silicon ones do, so they're better for some applications, like radio frequency detection.
Four reasons. First, it is a LOT cheaper and easier to get silicon. Germanium is a trace element in rocks. You need to mine and process lots of rock to get any germanium. Silicon is also known as sand--very easy to find. Second, germanium is heat sensitive. It's harder to solder a germanium device in than a silicon one because the heat can mess up the germanium. Germanium devices pretty much have to be soldered in by hand because you have to heat sink them, whereas silicon devices can be soldered in a soldering machine. Third, germanium's hazardous and silicon is generally not. People eat off glass plates, which are made from silicon. They do NOT eat from germanium plates, if they could even afford them. And fourth, germanium has a variable voltage drop--the higher the voltage, the greater the drop. If you pump 5000 volts into a silicon diode, you're going to get 4999.3v out the other side.