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Yes it is. Most Sn (tin) materials as semiconductors are direct band gap materials. Silicon on the other hand is an indirect band gap material.
I agree with Binitha on the point that Silicon is an indirect band gap semiconductor.
The indirect band gap semiconductors like silicon and germanium are mostly used because they are elemental, plentiful, and easier to process than the direct band gap semiconductors which are alloys or compounds.
Amorphous Silicon (a-Si) has band gap of about 1.7eV, whereas crystalline (c-Si) only has a band gap of 1.1eV
direct band gap means in e-k diagram valance bands are exactly below covalance band,in this band electron falls from the conduction band to valance band directly without going to metastable state and in indirect band gap the band electron falls from the conduction band to valance band by first going through the metastable state
Yes it is. Most Sn (tin) materials as semiconductors are direct band gap materials. Silicon on the other hand is an indirect band gap material.
Silicon is by all means an indirect band gap material.
GaP in an indirect band gap material
Silicon is an indirect band gap semiconductor
It is direct band gap material.
I agree with Binitha on the point that Silicon is an indirect band gap semiconductor.
The indirect band gap semiconductors like silicon and germanium are mostly used because they are elemental, plentiful, and easier to process than the direct band gap semiconductors which are alloys or compounds.
bcz silicon has direct band gap.in intermediatestage its not required any external energy between conduction band and valence band..due to that radiation willbe less..more external energy more more energy radiate...
I think because GaAs has a direct band gap transition but Si and Ge has indirect band gap transition. Both silicon and germanium are opaque and thus cannot be used to make LASERs.
Optical sources like LEDs use direct band gap so that conduction band electorn can recombine directly with a hole in valence band .
Amorphous Silicon (a-Si) has band gap of about 1.7eV, whereas crystalline (c-Si) only has a band gap of 1.1eV
carbon is not used as the semiconductor because it has larger band gap than silicon and germenium