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* basic physics -- a voltage applied across a junction or an insulator will produce some current, no matter how small. No perfect insulator exists in electronics.
* defects in manufacturers -- undesirable elements in a junction or an insulator, introduced during manufacturing and stay, will affect the normal current-voltage behavior
* unintended usage -- the voltage or current applied to an electronic component has gone beyond its spec
* damage -- the electronic component has suffered permanent damage due to excessive usage, abuse, or electrostatic discharge.
What else can I help you with?
What is vce and ie of a transistor?
A: Vce is the voltage across the transistor . Ie is the emitter current. Ico is the collector current with the base open. Or really the leakage.
The control current of a transistor flows between which two terminals?
The control current of a transistor flows between the base and the emitter terminals in a bipolar junction transistor (BJT). In a field-effect transistor (FET), the control current is related to the voltage applied between the gate and the source terminals, influencing the current flow between the drain and the source. In both cases, the control current or voltage regulates the larger current flowing through the device.
Why source cunneted to vdd in pmos?
In a PMOS transistor, the source is connected to the positive supply voltage (VDD) because it allows the transistor to turn on when the gate voltage is pulled low (below the source voltage). This configuration enables the PMOS to conduct current when the gate is at a lower potential, effectively allowing it to act as a switch in digital circuits. By connecting the source to VDD, the PMOS transistor can efficiently control the flow of current to the load connected to the drain.
Why the name is FET?
FET stands for Field Effect Transistor. The name FET comes because the gate current of a field effect transistor is zero and current present in the source conductor is due to an electric field produced by the substrate material placed between the gate and the source.
What does it mean by drain to source saturation current?
Drain to source saturation current refers to the maximum current that can flow from the drain to the source terminal of a field-effect transistor (FET) when it is in saturation mode. In this state, the transistor is fully on, and the current is primarily controlled by the gate voltage rather than the drain-source voltage. This condition occurs when the drain-source voltage exceeds a certain threshold, allowing the device to operate efficiently in amplification or switching applications. Understanding this current is crucial for designing circuits that utilize FETs effectively.
What is the source of leakage current in a transistor?
The current of the minority charges (collector region) is the source of the leakage current. At higher temperature, this leakage current increases due to increase in thermal energy.
What is vce and ie of a transistor?
A: Vce is the voltage across the transistor . Ie is the emitter current. Ico is the collector current with the base open. Or really the leakage.
The control current of a transistor flows between which two terminals?
The control current of a transistor flows between the base and the emitter terminals in a bipolar junction transistor (BJT). In a field-effect transistor (FET), the control current is related to the voltage applied between the gate and the source terminals, influencing the current flow between the drain and the source. In both cases, the control current or voltage regulates the larger current flowing through the device.
What causes collector current to flow when the emitter current is zero?
A: All transistor experience some kind of leakage with the one of the three termianal open. it called Iceo.
What will be the collector current of emitter base junction of a transister is reversed?
The question is poorly phrased and needs a grammatical cleanup. If you mean to ask "what happens to the collector-emitter current of a transistor when the emitter-base junction is reverse biased" then the answer is that the transistor will turn off, and you will only see leakage current.
Can anyone tell me About Intel 3d transistor chip benefits?
It reduces the leakage power. Increase the speed of operation. The technology will allow processors to run at lower voltages while at the same time limiting the amount of leakage current.
What is the difference between common base emitter transistor and common base transistor?
Common base transistor if the emitter is open current Ie=0 but a small collector current thus exist.this current is reversed biased collector to the base voltage it is represented by Icbo while common emitter is d base terminal is open circuit and the base junction is reversed biased current Icbo flow from the tcollector to the emitter in the external circuit this current is called leakage current.
Why source cunneted to vdd in pmos?
In a PMOS transistor, the source is connected to the positive supply voltage (VDD) because it allows the transistor to turn on when the gate voltage is pulled low (below the source voltage). This configuration enables the PMOS to conduct current when the gate is at a lower potential, effectively allowing it to act as a switch in digital circuits. By connecting the source to VDD, the PMOS transistor can efficiently control the flow of current to the load connected to the drain.
Advantages and disadvantages of depletion MOSFET?
Since the logic operations of depletion MOSFET is the opposite to the enhancement MOSFET, the depletion MOSFET produces positive logic circuits, such as, buffer, AND, and OR. The most significant advantage of the positive logic circuits is that it can produce positive feedback easily so that a single depletion MOSFET can become a memory cell. In contrast, you will need at least two enhancement MOSFET transistor to produce the positive feedback to build a memory cell. The other advantages of depletion MOSFET are that it is free from sub-threshold leakage current and gate-oxide leakage current. Since there is always a potential difference of Vdd between the gate terminal and channel for an enhancement MOSFET to cause the gate-oxide leakage current, the gate oxide leakage current is unavoidable when the transistor shrinks in size and oxide layer becomes thinner. The depletion MOSFET does not have this problem because there is no potential difference between the gate and channel. As a enhancement MOSFET shrinking in size, there is no way to stop the subthreshold leakage current diffused across from source to drain because the drain and source terminals are closer physically. This is not a problem for depletion MOSFET because a pinched channel will stop the diffusion current completely. The depletion MOSFET is the ideal, perfect transistor. The only disadvantage of depletion MOSFET is its inability to produce negative logic operations.
Why the name is FET?
FET stands for Field Effect Transistor. The name FET comes because the gate current of a field effect transistor is zero and current present in the source conductor is due to an electric field produced by the substrate material placed between the gate and the source.
What is the difference between transistor and FET?
An ordinary junction transistor consists of two junctions. In effect a variation of the base to emitter current influences the reverse leakage current at the base to collector junction. The base being common to both junctions. A Field Effect Transistor uses an electric field to narrow the conductive channel thus varying its resistance. A FET has an extremely high input resistance compared with that of a standard junction transistor.
What does it mean by drain to source saturation current?
Drain to source saturation current refers to the maximum current that can flow from the drain to the source terminal of a field-effect transistor (FET) when it is in saturation mode. In this state, the transistor is fully on, and the current is primarily controlled by the gate voltage rather than the drain-source voltage. This condition occurs when the drain-source voltage exceeds a certain threshold, allowing the device to operate efficiently in amplification or switching applications. Understanding this current is crucial for designing circuits that utilize FETs effectively.
