The re model of a Bipolar Junction Transistor (BJT) is a small-signal model used to analyze the transistor's behavior in the active region, particularly for small AC signals. In this model, the transistor is represented as a voltage-controlled current source (VCCS), where the output current is proportional to the input voltage (V_be) and is characterized by the transconductance (g_m). The model typically includes the emitter resistance (r_e), which accounts for the transistor's internal resistance to the emitter current. This simplified representation helps in understanding the BJT's amplification properties and is commonly used in circuit design and analysis.
Disadvantage:Easy to damage when compared to BJT
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
it is an oscillator
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The signal gain of a CE BJT amplifier is hFe or collector resistance divided by emitter resistance, whichever is less.
The re model of a BJT (Bipolar Junction Transistor) focuses on the small-signal behavior of the transistor, where the transistor is represented using a small-signal parameter (re) that accounts for the dynamic resistance at the emitter junction. In contrast, the hybrid model combines both the small-signal parameters (like re) and the large-signal behavior, incorporating the transistor's input and output characteristics through a more complex representation that includes resistors, current sources, and controlled sources. Essentially, the re model simplifies analysis for small-signal applications, while the hybrid model provides a more comprehensive approach for varying signal conditions.
Disadvantage:Easy to damage when compared to BJT
Bipolar junction transistor(BJT)
ApplicationsThe BJT remains a device that excels in some applications, such as discrete circuit design, due to the very wide selection of BJT types available, and because of its high transconductance and output resistance compared to MOSFETs. The BJT is also the choice for demanding analog circuits, especially for very-high-frequencyapplications, such as radio-frequency circuits for wireless systems. Bipolar transistors can be combined with MOSFETs in an integrated circuit by using a BiCMOSprocess of wafer fabrication to create circuits that take advantage of the application strengths of both types of transistor.
Three.
They are NPN and PNP. BJT mean bipolar junction transistors. there are two P-N junctions in BJT transisters.
because the fet is made out of carbon metal oxide and the bjt is made out of silicon or germanium
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
Re-model is made of only resistor. It gives real time operation i.e you can calculate all the values.
it is an oscillator
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There is not much difference between Re model and hybrid model. The only difference being hre(vi/vo) reverse voltage gain. The remainig parameters are comparable. hie=beta*re hfe=beta hoe=ro