Disadvantage:Easy to damage when compared to BJT
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
it is an oscillator
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The signal gain of a CE BJT amplifier is hFe or collector resistance divided by emitter resistance, whichever is less.
Disadvantage:Easy to damage when compared to BJT
Bipolar junction transistor(BJT)
ApplicationsThe BJT remains a device that excels in some applications, such as discrete circuit design, due to the very wide selection of BJT types available, and because of its high transconductance and output resistance compared to MOSFETs. The BJT is also the choice for demanding analog circuits, especially for very-high-frequencyapplications, such as radio-frequency circuits for wireless systems. Bipolar transistors can be combined with MOSFETs in an integrated circuit by using a BiCMOSprocess of wafer fabrication to create circuits that take advantage of the application strengths of both types of transistor.
Three.
They are NPN and PNP. BJT mean bipolar junction transistors. there are two P-N junctions in BJT transisters.
Re-model is made of only resistor. It gives real time operation i.e you can calculate all the values.
because the fet is made out of carbon metal oxide and the bjt is made out of silicon or germanium
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
There is not much difference between Re model and hybrid model. The only difference being hre(vi/vo) reverse voltage gain. The remainig parameters are comparable. hie=beta*re hfe=beta hoe=ro
it is an oscillator
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in BJT forwardbiasing & reverse biasing are carried out but in FET voltage divider biasing &self biasing are carried out.