The oxide of silicon is a stable insulating insoluble solid, making it possible to integrate the metal interconnects in planar layers over the semiconductor.
The oxide of germanium is unstable and soluble in water, making it necessary to connect the integrated components with individual wires which is far too labor intensive and is also impractical for integration levels beyond MSI. Texas Instruments made some prototype SSI germanium ICs this way in 1958 and 1959 but abandoned the process when they licensed Fairchild's planar silicon IC process.
No ICs are made of germanium now, only discrete transistors and diodes.
Some work has been done on ICs made of silicon-germanium alloy, but I am not sure of the current status.
The invention of the planar process by which most IC devices are fabricated relies on the gas phase diffusion of dopants to produce N-type and P-type regions, but also on the ability of silicon dioxide to mask these diffusion processes and passivate the chip surface eliminating the need for hermetic packaging. Silicon is unique in its ability to be oxidized to produce a stable insulating coating. Germanium dioxide is crumbly and water soluble, making it impossible to use in this process. While the first IC made used germanium, it had to be handwired which would have made them prohibitively expensive to produce and much larger than even the early silicon ICs.
Silicon is used in electronics as a semi-conductor. All of the processing units in computers now use silicon to keep parts from causing electrical signals from passing from part to part unless it is meant to. Silicon is also used in the making of transistors.
The monolithic integrated circuit was invented by Jack Kilby at Texas Instruments in 1958. It was made of a single crystal of germanium. Although all the components were made together in that crystal their interconnections still had to be wired. In early 1959 Robert Noyce of Fairchild Semiconductor invented an improved integrated circuit using silicon. The use of silicon instead of germanium allowed passivation of the chip surface with an insulating layer of silicon dioxide and interconnecting the components with a layer of metal over that. These were the first practical monolithic integrated circuits and Kilby's original design never went into production.
As in all modern electronic devices, a microscopically thin layer of silicon dioxide is grown as an insulator and passivator over the silicon of integrated circuits and discrete transistors. This process was developed in 1959 by Fairchild Semiconductor for use in their Planar Process for making silicon transistors and immediately spread throughout the industry, permitting use of inexpensive plastic packaging for semiconductor devices for the first time. Silicon oxide polymers are also in the silicone rubber parts that seal the case and keyboard from moisture.
Transistors require semiconductor material to be able to function since a transistor must be able to change it's state of conductivity according to its working conditions. Although many elements these days are involved in manufacturing of transistors. Fundamentally two common semiconductors are described for educational purpose for BJT (bipolar junction transistors). They are Silicon (Si) and Germanium (Ge). Silicon is never intrinsic (pure) in transistors. To form a p-n-p or n-p-n junction they are doped with pentavalent (5 valance electrons) and trivalent (3-valance electrons) impurities into their crystal lattice. Common impurities in silicon transistors may be trivalent Boron for p-type and pentavalent phosphorus for n-type. Germanium conducts better when in conductive state than silicon due to 32 electrons per atom, but due to high electron density the device can handle very little electrical current. Germanium was used in the past for pre-amplifiers. Silicon does not have as good conductivity and also does not provide very high hfe values. The highest hfe value you will find in signal transistors would be approximately 300, whereas power transistors you would commonly have an hfe of about 25. Silicon only has 14 electrons per atom. The main advantage is with silicon is that it has a lower electron density when it is in conductive state; to allow larger currents and higher power dissipation. In the past, difficulty was experienced with the practical use of silicon due to its lack of 'purity'. Once a purer form of silicon was produced, there was no stop to it. Silicon is more cost effective. In 1998 silicon sold for $10 p/kg compared to germanium which was almost at $1800 p/kg. Germanium is showing some comeback again. Gallium arsenide (GaAs) in wireless communications devices are being replaced with Silicon-germanide (SiGe) and become more useful with modern high speed integrated circuits. Germanium is also commonly used in infrared night vision systems and fiber-optics. Ultimately one cannot say that Silicon is the only element used in transistors, but what one can say is that it is probably the most commonly used and most fundamental for modern applications.
Silicon is preferred over germanium in semiconductor applications because it has a higher melting point, better thermal stability, and can form a native oxide layer for insulation. Additionally, silicon has a wider bandgap, making it more suitable for high-temperature and high-power electronic devices.
Silicon is preferred over carbon for semiconductor fabrication because it is abundant, easily obtained in high purity, and has well-established processing techniques. Silicon also has a higher mobility for charge carriers, making it more efficient for electronic applications compared to carbon. Additionally, silicon dioxide forms a stable insulating layer with silicon, enabling the creation of reliable semiconductor devices.
Silicon is generally preferred over germanium for electronic applications because it has a higher bandgap energy, allowing for the creation of more efficient and faster electronic devices. Silicon is also more readily available and easier to work with in terms of manufacturing processes compared to germanium. Additionally, silicon has better thermal stability and higher breakdown voltage, making it more reliable for long-term applications.
Silicon is preferred over germanium because it is more abundant, less costly, and has a higher thermal stability. Silicon also forms a better oxide layer, making it more suitable for integrated circuit applications. Additionally, silicon has better electron mobility and is less susceptible to thermal runaway compared to germanium.
Germanium diodes are more expensive than silicon ones, germanium is harder to process, germanium cannot be used to make integrated circuits (while early prototype integrated circuits were germanium the wiring between the integrated components cannot be integrated making it too expensive for production), germanium cannot operate with a junction temperature above 60C (silicon will operate up to 150C), and its reverse leakage current is greater. However! Germanium diodes have a lower forward voltage drop than silicon ones do, so they're better for some applications, like radio frequency detection.
Silicon is preferred in designing integrated circuits (ICs) because it is abundant, has good electrical properties, is easy to manufacture, and forms a stable oxide layer for insulation. These characteristics make silicon an ideal material for creating the transistors and other components used in ICs.
It was simply a matter of availability and ease of processing at the time. Germanium was available and much easier to purify to the ultrapure level needed in semiconductors. It took well over a decade for the technology to progress to the point that silicon could also be purified to the ultrapure level needed in semiconductors. Once silicon could be used it quickly replaced germanium in most applications because it has several physical properties that are better than germanium.
I assume you mean the advantages of Silicon over Germanium in semiconductor devices.Some of them are:Silicon will operate at junction temperatures up to 150C; Germanium will only operate at junction temperatures up to about 60C.Silicon oxides and nitrides are solid insulators, allowing formation of passivation layers over the edges of junctions and thus usage of non-hermetic plastic packages; Germanium oxides and nitrides are not insulators, leaving the edges of junctions exposed and open to surface contaminates forcing usage of metal or glass hermetic packaging, which costs more, to prevent device failure.Silicon ICs are simple to make using just photolithography processes; Germanium ICs would require manual wiring of the components after they were created using photolithography processes, making Germanium ICs impractical for mass production.etc.
The invention of the planar process by which most IC devices are fabricated relies on the gas phase diffusion of dopants to produce N-type and P-type regions, but also on the ability of silicon dioxide to mask these diffusion processes and passivate the chip surface eliminating the need for hermetic packaging. Silicon is unique in its ability to be oxidized to produce a stable insulating coating. Germanium dioxide is crumbly and water soluble, making it impossible to use in this process. While the first IC made used germanium, it had to be handwired which would have made them prohibitively expensive to produce and much larger than even the early silicon ICs.
Reverse saturation current of silicon is in nano ampear therefore it is prefered over germanium
Silicon is used in electronics as a semi-conductor. All of the processing units in computers now use silicon to keep parts from causing electrical signals from passing from part to part unless it is meant to. Silicon is also used in the making of transistors.
Germanium is not commonly used in the fabrication of thyristors primarily due to its lower thermal stability and higher leakage current compared to silicon. Silicon's superior electrical properties, including a wider bandgap and better temperature handling, make it more suitable for high-power applications. Additionally, silicon's well-established manufacturing processes and availability further enhance its preference over germanium in thyristor production. As a result, silicon-based thyristors are more reliable and efficient for modern electronic applications.