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The oxide of silicon is a stable insulating insoluble solid, making it possible to integrate the metal interconnects in planar layers over the semiconductor.
The oxide of germanium is unstable and soluble in water, making it necessary to connect the integrated components with individual wires which is far too labor intensive and is also impractical for integration levels beyond MSI. Texas Instruments made some prototype SSI germanium ICs this way in 1958 and 1959 but abandoned the process when they licensed Fairchild's planar silicon IC process.
No ICs are made of germanium now, only discrete transistors and diodes.
Some work has been done on ICs made of silicon-germanium alloy, but I am not sure of the current status.
Wiki User
∙ 9y ago
Wiki User
∙ 7y agoSilicon is actually preferred to germanium within the manufacture of semiconductor devices due to the following reasons:
- Silicon is cheap and abundant
- In silicon, leakage current is less affected by temperature as compared to germanium.
- The leakage current in silicon is very very small as compared to germanium.
- The working temperature of silicon is more than that of germanium. The working junction temperature of silicon can go as high as 150C whereas the working junction temperature of germanium can only go as high as 60C
- Silicon dioxide is a stable insoluble solid that can be used both to electrically insulate circuitry and to passivate junctions preventing contamination (allowing use of inexpensive plastic packages), germanium dioxide is a crumbly water soluble solid (this requires all germanium devices to be packaged in expensive metal or glass hermetically sealed cases and making germanium integrated circuits almost impossible)
Wiki User
∙ 11y agoSilicon is the second most abundant material in the Earth's crust (nearly 26%, sThe advantages of Si over Ge are:
=> Stable and strong material & crystal structure like diamond
=> Si has a wider bandgap than Ge
=> higher operating temperature (125-175 oC vs. ~85 oC) and thus become intrinsic at higher temp.
=> Si readily forms a native oxide (SiO2) high-quality insulator protects and "passivates" underlying circuitry helps in patterning useful for dopant masking.
=>Large variety of process steps possible without the problem of decomposition (as in the case of compound semiconductors)
=> Si is cheap and abundant
Wiki User
∙ 8y ago- Silicon devices are easily passivated and so can be packaged in inexpensive molded plastic packages, while germanium devices must be packaged in more expensive hermetically sealed glass, ceramic, or metal packages.
- Silicon devices can operate up to 150C junction temperature, making them more suitable for high power use than germanium devices, which can only operate up to 60C junction temperature,
- Silicon is a less expensive, more plentiful material than germanium. (Germanium was used more initially because it is an easier-to-process material than silicon, but this changed when Fairchild developed and began licensing the "planar process," which also made the monolithic integrated circuit practical).
Wiki User
∙ 14y agoIn semiconductors silicon has the advantage of resisting higher temperatures: 200 deg. C, while germanium breaks down above 90 deg. C.
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Why silicon is preferred over germanium in the fabrication of integrated circuits?
The invention of the planar process by which most IC devices are fabricated relies on the gas phase diffusion of dopants to produce N-type and P-type regions, but also on the ability of silicon dioxide to mask these diffusion processes and passivate the chip surface eliminating the need for hermetic packaging. Silicon is unique in its ability to be oxidized to produce a stable insulating coating. Germanium dioxide is crumbly and water soluble, making it impossible to use in this process. While the first IC made used germanium, it had to be handwired which would have made them prohibitively expensive to produce and much larger than even the early silicon ICs.
Silicon uses in electronics?
Silicon is used in electronics as a semi-conductor. All of the processing units in computers now use silicon to keep parts from causing electrical signals from passing from part to part unless it is meant to. Silicon is also used in the making of transistors.
Who was the first to invent a microchip?
The monolithic integrated circuit was invented by Jack Kilby at Texas Instruments in 1958. It was made of a single crystal of germanium. Although all the components were made together in that crystal their interconnections still had to be wired. In early 1959 Robert Noyce of Fairchild Semiconductor invented an improved integrated circuit using silicon. The use of silicon instead of germanium allowed passivation of the chip surface with an insulating layer of silicon dioxide and interconnecting the components with a layer of metal over that. These were the first practical monolithic integrated circuits and Kilby's original design never went into production.
What are the uses of silicon oxide in a mobile phone?
As in all modern electronic devices, a microscopically thin layer of silicon dioxide is grown as an insulator and passivator over the silicon of integrated circuits and discrete transistors. This process was developed in 1959 by Fairchild Semiconductor for use in their Planar Process for making silicon transistors and immediately spread throughout the industry, permitting use of inexpensive plastic packaging for semiconductor devices for the first time. Silicon oxide polymers are also in the silicone rubber parts that seal the case and keyboard from moisture.
Why only silicon in IC fabrication?
Transistors require semiconductor material to be able to function since a transistor must be able to change it's state of conductivity according to its working conditions. Although many elements these days are involved in manufacturing of transistors. Fundamentally two common semiconductors are described for educational purpose for BJT (bipolar junction transistors). They are Silicon (Si) and Germanium (Ge). Silicon is never intrinsic (pure) in transistors. To form a p-n-p or n-p-n junction they are doped with pentavalent (5 valance electrons) and trivalent (3-valance electrons) impurities into their crystal lattice. Common impurities in silicon transistors may be trivalent Boron for p-type and pentavalent phosphorus for n-type. Germanium conducts better when in conductive state than silicon due to 32 electrons per atom, but due to high electron density the device can handle very little electrical current. Germanium was used in the past for pre-amplifiers. Silicon does not have as good conductivity and also does not provide very high hfe values. The highest hfe value you will find in signal transistors would be approximately 300, whereas power transistors you would commonly have an hfe of about 25. Silicon only has 14 electrons per atom. The main advantage is with silicon is that it has a lower electron density when it is in conductive state; to allow larger currents and higher power dissipation. In the past, difficulty was experienced with the practical use of silicon due to its lack of 'purity'. Once a purer form of silicon was produced, there was no stop to it. Silicon is more cost effective. In 1998 silicon sold for $10 p/kg compared to germanium which was almost at $1800 p/kg. Germanium is showing some comeback again. Gallium arsenide (GaAs) in wireless communications devices are being replaced with Silicon-germanide (SiGe) and become more useful with modern high speed integrated circuits. Germanium is also commonly used in infrared night vision systems and fiber-optics. Ultimately one cannot say that Silicon is the only element used in transistors, but what one can say is that it is probably the most commonly used and most fundamental for modern applications.
Why silicon is preferred over other materials in designing ic?
because1) knee voltage of silicon is .7V where as germanium has .3V 2)silicon breakdown take place at around 200 0C and germanium at 90 0C
Why silicon is preferred over germanium in the fabrication of p-n junction diode?
Germanium diodes are more expensive than silicon ones, germanium is harder to process, germanium cannot be used to make integrated circuits (while early prototype integrated circuits were germanium the wiring between the integrated components cannot be integrated making it too expensive for production), germanium cannot operate with a junction temperature above 60C (silicon will operate up to 150C), and its reverse leakage current is greater. However! Germanium diodes have a lower forward voltage drop than silicon ones do, so they're better for some applications, like radio frequency detection.
Why silicon is preferred over germanium in the fabrication of integrated circuits?
The invention of the planar process by which most IC devices are fabricated relies on the gas phase diffusion of dopants to produce N-type and P-type regions, but also on the ability of silicon dioxide to mask these diffusion processes and passivate the chip surface eliminating the need for hermetic packaging. Silicon is unique in its ability to be oxidized to produce a stable insulating coating. Germanium dioxide is crumbly and water soluble, making it impossible to use in this process. While the first IC made used germanium, it had to be handwired which would have made them prohibitively expensive to produce and much larger than even the early silicon ICs.
Why multimeter not measuring a peak value?
Reverse saturation current of silicon is in nano ampear therefore it is prefered over germanium
Silicon uses in electronics?
Silicon is used in electronics as a semi-conductor. All of the processing units in computers now use silicon to keep parts from causing electrical signals from passing from part to part unless it is meant to. Silicon is also used in the making of transistors.
What are the advantages over germanium?
I assume you mean the advantages of Silicon over Germanium in semiconductor devices.Some of them are:Silicon will operate at junction temperatures up to 150C; Germanium will only operate at junction temperatures up to about 60C.Silicon oxides and nitrides are solid insulators, allowing formation of passivation layers over the edges of junctions and thus usage of non-hermetic plastic packages; Germanium oxides and nitrides are not insulators, leaving the edges of junctions exposed and open to surface contaminates forcing usage of metal or glass hermetic packaging, which costs more, to prevent device failure.Silicon ICs are simple to make using just photolithography processes; Germanium ICs would require manual wiring of the components after they were created using photolithography processes, making Germanium ICs impractical for mass production.etc.
Why was William Shockley in favor of germanium?
It was simply a matter of availability and ease of processing at the time. Germanium was available and much easier to purify to the ultrapure level needed in semiconductors. It took well over a decade for the technology to progress to the point that silicon could also be purified to the ultrapure level needed in semiconductors. Once silicon could be used it quickly replaced germanium in most applications because it has several physical properties that are better than germanium.
Who was the first to invent a microchip?
The monolithic integrated circuit was invented by Jack Kilby at Texas Instruments in 1958. It was made of a single crystal of germanium. Although all the components were made together in that crystal their interconnections still had to be wired. In early 1959 Robert Noyce of Fairchild Semiconductor invented an improved integrated circuit using silicon. The use of silicon instead of germanium allowed passivation of the chip surface with an insulating layer of silicon dioxide and interconnecting the components with a layer of metal over that. These were the first practical monolithic integrated circuits and Kilby's original design never went into production.
Advantages of silicon over germanium?
silicon has a wider bandgap than germenium .silicon jeakage current small, easily available then Ga and break down voltage is more. knee voltage of si is 0.7and Ga is having 0.3then Si is very useful.
What are the uses of silicon oxide in a mobile phone?
As in all modern electronic devices, a microscopically thin layer of silicon dioxide is grown as an insulator and passivator over the silicon of integrated circuits and discrete transistors. This process was developed in 1959 by Fairchild Semiconductor for use in their Planar Process for making silicon transistors and immediately spread throughout the industry, permitting use of inexpensive plastic packaging for semiconductor devices for the first time. Silicon oxide polymers are also in the silicone rubber parts that seal the case and keyboard from moisture.
Why only silicon in IC fabrication?
Transistors require semiconductor material to be able to function since a transistor must be able to change it's state of conductivity according to its working conditions. Although many elements these days are involved in manufacturing of transistors. Fundamentally two common semiconductors are described for educational purpose for BJT (bipolar junction transistors). They are Silicon (Si) and Germanium (Ge). Silicon is never intrinsic (pure) in transistors. To form a p-n-p or n-p-n junction they are doped with pentavalent (5 valance electrons) and trivalent (3-valance electrons) impurities into their crystal lattice. Common impurities in silicon transistors may be trivalent Boron for p-type and pentavalent phosphorus for n-type. Germanium conducts better when in conductive state than silicon due to 32 electrons per atom, but due to high electron density the device can handle very little electrical current. Germanium was used in the past for pre-amplifiers. Silicon does not have as good conductivity and also does not provide very high hfe values. The highest hfe value you will find in signal transistors would be approximately 300, whereas power transistors you would commonly have an hfe of about 25. Silicon only has 14 electrons per atom. The main advantage is with silicon is that it has a lower electron density when it is in conductive state; to allow larger currents and higher power dissipation. In the past, difficulty was experienced with the practical use of silicon due to its lack of 'purity'. Once a purer form of silicon was produced, there was no stop to it. Silicon is more cost effective. In 1998 silicon sold for $10 p/kg compared to germanium which was almost at $1800 p/kg. Germanium is showing some comeback again. Gallium arsenide (GaAs) in wireless communications devices are being replaced with Silicon-germanide (SiGe) and become more useful with modern high speed integrated circuits. Germanium is also commonly used in infrared night vision systems and fiber-optics. Ultimately one cannot say that Silicon is the only element used in transistors, but what one can say is that it is probably the most commonly used and most fundamental for modern applications.
What is the purpose of semiconductor over XLPE?
The purpose of the semiconductor over XLPE is to equalize the electrical stresses over a large area.
