Oxygen to form Ge2O3 and GeO, sulfur to form Ge2S3 and GeS, chlorine to form GeCl2 and GeCl4, hydrogen to form GeH4 and Ge2H6, nitrogen to form Ge3N4,.
- it also forms organogermanium compounds such as CH3GeCl3
Germanium has an extensive chemistry but it isn't very well studied or well known.
Intrinsic semiconductivity
the reason for 0.3V as barrier potential in Ge is:-
Electrons near the junction drift into the P region and recombine with holes. At the junction, the P-side has a layer of negative charges or negative ions (since p-type material is electrically nuetral addition of an electron makes it a negative ion). At the junction, the N-side has given up electrons thus creating holes i.e. it has positive charges or positive ions.This ion build up creates an area that is depleted of any conduction electrons or holes i.e. it has positive charges or positive ions cancelled out by negative charges or negative ions This ion build up creates an area that is depleted of any conduction electrons or holes. This represents a potential difference of 0v to 0.3v volts Ge diodes Semiconductor devices are controlled by controlling the depletion region of the device. The potential difference is called the barrier potential.
It's basically what makes the semiconductor work, so its a really good question.
because of germanium oxide´s (GeO2) high refractive index, about 10% of worldwide germanium consumption is from optical uses such as lenses to cameras and centres of fibre cables
another use of germanium is as a catalyst for polymerisation of polyethylene terephthalate, the plastic in most water bottles. germanium is also used in an alloy with silicon for semiconductors that can be faster then those with only silicon.
LEDs are made from binary semiconductors (e.g. gallium aluminum indium phosphide) not unary semiconductors (e.g. silicon, germanium) because they can be made transparent to light. Silicon & germanium are opaque.