• higher maximum operating junction temperature of 150C vs. only about 60C.
• easier to process.
• both oxide & nitride are stable solid insoluble insulators.
• higher switching speed.

germenium diode contains majority electron as a charge carriers while the silicon diode contains holes as a majority charge cariers,

germanium has great intrinsic concentration at room temperature,hence conduction is great in germanum compared to silicon, and resistance decreases in germanum and hence built in potentail also less in germanum compared to silicon.built in potential of silicon is 0.7v

built in potential of germanum is 0.3v.

1)intrinsic concentration of germanium at room temperature is 2.5*10^13 atoms/cm^3.

2)intrinsic concentration of silicon at room temperature of 300k is 1.5*10^10 atoms/cm^3.

No, the metalloids.

Simple, Use the multi-meter , switch to the diode option then connect the positive wire to the positive of diode n negative to the negative ( +ve wire red, -ve wire black) if the there is a reading of =~0.7V then it is silicon. and if it is =~ 0.3V then it is germanium.

There are 4 stable natural isotopes of Ge: 70, 72, 73 , 74. 76Ge (also a natural isotope, 7,44 %) has longest half-life of all known radioisotopes as well.

Of course, the artificial isotopes are unstable.

about 0.2 V

more at higher temps

any closer look at the specific diodes spec sheet

dopeants vary

97f

very

no

Germanium has an atomic number of 32. The mass number of any isotope is defined as the sum of the numbers of neutrons and protons in each atomic nucleus, and the number of protons is the same as the atomic number. Therefore, the number of neutrons in Ge-73 is 73 - 32 or 41.

Derived from Germania- meaning Germany. Since it was first discovered by Clemens Winkler in Germany.

Ge3As4

Negitive cathode, positive anode, voltage accross barrier = 0.3V